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"Enhanced Drain Current in Transient Mode due to Long Ionization Time of ..."
Tomohisa Miyao et al. (2022)
- Tomohisa Miyao, Takahisa Tanaka, Itsuki Imanishi, Masayuki Ichikawa, Shuya Nakagawa, Hiroki Ishikuro, Toshitsugu Sakamoto, Munehiro Tada, Ken Uchida:
Enhanced Drain Current in Transient Mode due to Long Ionization Time of Shallow Impurities at 4 K in 65-nm bulk Cryo CMOS Transistors. DRC 2022: 1-2
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