"AlN-capped P-(AlxGal-x)2O3/Ga2O3 heterostructure field-effect transistors ..."

James Spencer Lundh et al. (2022)

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DOI: 10.1109/DRC55272.2022.9855809

access: closed

type: Conference or Workshop Paper

metadata version: 2023-09-30

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  - conf/drc/LundhMSJCSCGKKG22
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  - https://dblp.org/rec/conf/drc/LundhMSJCSCGKKG22
James Spencer Lundh, Hannah N. Masten, Kohei Sasaki, Alan G. Jacobs, Zhe Cheng, Joseph Spencer, Lei Chen, James C. Gallagher, Andrew D. Koehler, Keita Konishi, Samuel Graham, Akito Kuramata, Karl D. Hobart, Marko J. Tadjer:
AlN-capped P-(AlxGal-x)2O3/Ga2O3 heterostructure field-effect transistors for near-junction thermal management of next generation power devices. DRC 2022: 1-2

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