"AlN/GaN/AlN HEMTs on Bulk AlN Substrates with High Drain Current Density ..."

Eungkyun Kim et al. (2024)

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DOI: 10.1109/DRC61706.2024.10605544

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type: Conference or Workshop Paper

metadata version: 2024-08-16

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Eungkyun Kim, Yu-Hsin Chen, Jimy Encomendero, Debdeep Jena, Huili Grace Xing:
AlN/GaN/AlN HEMTs on Bulk AlN Substrates with High Drain Current Density > 2.8 A/mm and Average Breakdown Field > 2 MV/cm. DRC 2024: 1-2

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