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"Normally-Off InAlN/GaN Fin-MOSHEMT with Fluorine Treatment."

Yi-Ping Huang, Ching-Sung Lee, Wei-Chou Hsu (2020)

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DOI: 10.1109/DRC50226.2020.9135151

access: closed

type: Conference or Workshop Paper

metadata version: 2020-07-27

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  dblp key:
  - conf/drc/HuangLH20
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Yi-Ping Huang, Ching-Sung Lee, Wei-Chou Hsu:
Normally-Off InAlN/GaN Fin-MOSHEMT with Fluorine Treatment. DRC 2020: 1-2

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