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"180nm Sn-doped Ge2Sb2Te5 chalcogenide ..."

Yi-Chou Chen et al. (2003)

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DOI: 10.1109/CICC.2003.1249426

access: closed

type: Conference or Workshop Paper

metadata version: 2021-11-15

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Yi-Chou Chen, C. T. Chen, J. Y. Yu, Chienying Lee, Chieh-Fang Chen, S. L. Lung, Rich Liu:
180nm Sn-doped Ge₂Sb₂Te₅ chalcogenide phase-change memory device for low power, high speed embedded memory for SoC applications. CICC 2003: 395-398

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