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"High Gain 220 - 275 GHz Amplifier MMICs Based on Metamorphic 20 nm InGaAs ..."

Axel Tessmann et al. (2018)

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DOI: 10.1109/BCICTS.2018.8550836

access: closed

type: Conference or Workshop Paper

metadata version: 2021-05-07

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  - conf/bcicts/TessmannLHBM18
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  - https://dblp.org/rec/conf/bcicts/TessmannLHBM18
Axel Tessmann, Arnulf Leuther, Felix Heinz, Frank Bernhardt, Hermann Massler:
High Gain 220 - 275 GHz Amplifier MMICs Based on Metamorphic 20 nm InGaAs MOSFET Technology. BCICTS 2018: 156-159

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