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"SiGe HBT Power Amplifier design using 0.35 µm BiCMOS technology with ..."
Jingyang Zhang et al. (2011)
- Jingyang Zhang, Dawn Wang, Hanyi Ding, John Gillis, Wan Ni, Susan L. Sweeney, Dasheng Fang:
SiGe HBT Power Amplifier design using 0.35 µm BiCMOS technology with through-silicon-via. ASICON 2011: 1082-1085
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