"Mos2 transistor gated by PMMA-based electrolyte for sub-1 V operation."

Hongwei Tang et al. (2019)

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DOI: 10.1109/ASICON47005.2019.8983655

access: closed

type: Conference or Workshop Paper

metadata version: 2020-12-08

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Hongwei Tang, Fuyou Liao, Xinzhi Zhang, Jianan Deng, Jing Wan, Wenzhong Bao:
Mos2 transistor gated by PMMA-based electrolyte for sub-1 V operation. ASICON 2019: 1-4

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