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"Conduction mechanism of self-rectifying n+Si-HfO2-Ni RRAM."
D. Y. Lu et al. (2013)
- D. Y. Lu, X. A. Tran, H. Y. Yu, D. M. Huang, Yung-Yang Lin, S. J. Ding, P. F. Wang, Ming-Fu Li:
Conduction mechanism of self-rectifying n+Si-HfO2-Ni RRAM. ASICON 2013: 1-4
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