"Effects of unintended dopants on I-V characteristics of the double-gate ..."

Peicheng Li et al. (2011)

> Home

Details and statistics

DOI: 10.1109/ASICON.2011.6157310

access: closed

type: Conference or Workshop Paper

metadata version: 2017-05-25

- view
  - electronic edition via DOI
  - unpaywalled version
  authority control:
- export record
  dblp key:
  - conf/asicon/LiMH0T11
- ask others
- share record
  persistent URL:
  - https://dblp.org/rec/conf/asicon/LiMH0T11
Peicheng Li, Guanghui Mei, Guangxi Hu, Ran Liu, Tingao Tang:
Effects of unintended dopants on I-V characteristics of the double-gate MOSFETs, a simulation study. ASICON 2011: 735-738

manage site settings

To protect your privacy, all features that rely on external API calls from your browser are turned off by default. You need to opt-in for them to become active. All settings here will be stored as cookies with your web browser. For more information see our F.A.Q.