"E-mode p-FET-bridge HEMT: Toward high VTH, low reverse-conduction loss and ..."

Mengyuan Hua et al. (2021)

> Home

Details and statistics

DOI: 10.1109/ASICON52560.2021.9620369

access: closed

type: Conference or Workshop Paper

metadata version: 2024-10-06

- view
  - electronic edition via DOI
  - unpaywalled version
  authority control:
- export record
  dblp key:
  - conf/asicon/HuaCWLLZC21
- ask others
- share record
  persistent URL:
  - https://dblp.org/rec/conf/asicon/HuaCWLLZC21
Mengyuan Hua, Junting Chen, Chengcai Wang, Lingling Li, Ling Liu, Zheyang Zheng, Kevin J. Chen:
E-mode p-FET-bridge HEMT: Toward high VTH, low reverse-conduction loss and enhanced stability. ASICON 2021: 1-4

manage site settings

To protect your privacy, all features that rely on external API calls from your browser are turned off by default. You need to opt-in for them to become active. All settings here will be stored as cookies with your web browser. For more information see our F.A.Q.