"TCAD Study on Strain Engineering in Vertical Channel Gate-all-around ..."

Ran Bi et al. (2023)

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DOI: 10.1109/ASICON58565.2023.10396480

access: closed

type: Conference or Workshop Paper

metadata version: 2024-02-16

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Ran Bi, Baotong Zhang, Jianhuan Wang, Jianjun Zhang, Haixia Li, Ming Li:
TCAD Study on Strain Engineering in Vertical Channel Gate-all-around Transistor. ASICON 2023: 1-4

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