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"A GaSb/In0.4Ga0.6As Heterojunction Z-Shaped Tunnel Field-Effect Transistor ..."

Jiarui Bao et al. (2019)

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DOI: 10.1109/ASICON47005.2019.8983662

access: closed

type: Conference or Workshop Paper

metadata version: 2022-10-02

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  dblp key:
  - conf/asicon/BaoHHHLZ19
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Jiarui Bao, Shuyan Hu, Guangxi Hu, Laigui Hu, Ran Liu, Lirong Zheng:
A GaSb/In0.4Ga0.6As Heterojunction Z-Shaped Tunnel Field-Effect Transistor with High Performance. ASICON 2019: 1-4

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