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"A 9T subthreshold SRAM bitcell with data-independent bitline leakage for ..."

Qi Li, Tony T. Kim (2010)

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DOI: 10.1109/APCCAS.2010.5774949

access: closed

type: Conference or Workshop Paper

metadata version: 2017-05-17

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Qi Li, Tony T. Kim:
A 9T subthreshold SRAM bitcell with data-independent bitline leakage for improved bitline swing and variation tolerance. APCCAS 2010: 260-263

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