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"The advantage of silicon carbide material in designing of power bipolar ..."

Mehrez Oueslati et al. (2015)

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DOI: 10.1109/SSD.2015.7348149

access: closed

type: Conference or Workshop Paper

metadata version: 2020-09-05

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  - conf/IEEEssd/OueslatiGJB15
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  - https://dblp.org/rec/conf/IEEEssd/OueslatiGJB15
Mehrez Oueslati, Hatem Garrab, Atef Jedidi, Kamel Besbes:
The advantage of silicon carbide material in designing of power bipolar junction transistors. SSD 2015: 1-6

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