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ORCIDAlain Chantre
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2010 – 2019
- 2013
[j6]Sorin P. Voinigescu, Alexander Tomkins, Eric Dacquay, Pascal Chevalier
, Jürgen Hasch, Alain Chantre, Bernard Sautreuil:
A Study of SiGe HBT Signal Sources in the 220-330-GHz Range. IEEE J. Solid State Circuits 48(9): 2011-2021 (2013)
2000 – 2009
- 2009
- [j5]Grégory Avenier, Malick Diop, Pascal Chevalier, Germaine Troillard, Nicolas Loubet, Julien Bouvier, Linda Depoyan, Nicolas Derrier, Michel Buczko, Cédric Leyris, Samuel Boret, Sébastien Montusclat, Alain Margain, Sébastien Pruvost, Sean T. Nicolson, Kenneth H. K. Yau, Nathalie Revil, Daniel Gloria, Didier Dutartre, Sorin P. Voinigescu, Alain Chantre:
0.13µm SiGe BiCMOS Technology Fully Dedicated to mm-Wave Applications. IEEE J. Solid State Circuits 44(9): 2312-2321 (2009) - [c2]Stefaan Decoutere, Stefaan Van Huylenbroeck, Bernd Heinemann, Alexander Fox, Pascal Chevalier, Alain Chantre, Thomas F. Meister, Klaus Aufinger, Michael Schröter:
Pushing the speed limits of SiGe: C HBTs up to 0.5 Terahertz. CICC 2009: 347-354 - 2008
- [j4]Ekaterina Laskin, Pascal Chevalier, Alain Chantre, Bernard Sautreuil, Sorin P. Voinigescu:
165-GHz Transceiver in SiGe Technology. IEEE J. Solid State Circuits 43(5): 1087-1100 (2008) - [c1]Patrice Garcia, Alain Chantre, Sébastien Pruvost, Pascal Chevalier, Sean T. Nicolson, David Roy, Sorin P. Voinigescu, Christophe Garnier:
Will BiCMOS stay competitive for mmW applications ? CICC 2008: 387-394 - 2007
- [j3]Sean T. Nicolson, Kenneth H. K. Yau, Pascal Chevalier, Alain Chantre, Bernard Sautreuil, Keith W. Tang, Sorin P. Voinigescu:
Design and Scaling of W-Band SiGe BiCMOS VCOs. IEEE J. Solid State Circuits 42(9): 1821-1833 (2007) - 2005
- [j2]Pascal Chevalier, Cyril Fellous, Laurent Rubaldo, Franck Pourchon, Sébastien Pruvost, Rudy Beerkens, Fabienne Saguin, Nicolas Zerounian, Benoît Barbalat, Sylvie Lépilliet, Didier Dutartre, Didier Céli, Isabelle Telliez, Daniel Gloria, Frédéric Aniel, François Danneville, Alain Chantre:
230-GHz self-aligned SiGeC HBT for optical and millimeter-wave applications. IEEE J. Solid State Circuits 40(10): 2025-2034 (2005) - 2001
- [j1]Liviu Militaru, A. Souifi, M. Mouis, Alain Chantre, G. Brémond:
Investigation of deep traps in silicon-germanium epitaxial base bipolar transistors with a single polysilicon quasi self-aligned architecture. Microelectron. Reliab. 41(2): 253-263 (2001)
Coauthor Index
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