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S. Emans

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2025
[c1]
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H. Zhou, M. Hasanuzzaman, S. D. Suk, S. Emans, S. Siddiqui, R. Robison, R. Vega, M. Wang, Yasir Sulehria, S. Mochizuki, C. Durfee, Oleg Gluschenkov, N. Fokas, G. Bajpai, E. Leobandung, R. Mo, R. Krishnan, K. Okada, H. Miki, L. Qin, C. Child, T. Standaert, K. Zhao, D. Sohn, Y. Fukuzaki, K. Tomida, D. Guo, H. Bu:
Hot Carrier Degradation and performance boost on Si Channel nFET Gate-All-Around Nanosheet Devices. IRPS 2025: 1-8

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