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B. Mounika

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2024
[j2]
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B. Mounika, Asisa Kumar Panigrahy, J. Ajayan, N. Khadar Basha, Vakkalakula Bharath Sreenivasulu, M. Durga Prakash, Sandip Bhattacharya, D. Nirmal:
A Novel L_G = 40 nm AlN-GDC-HEMT on SiC Wafer With f_T/I_DS,peak of 400 GHz/3.18 mA/mm for Future RF Power Amplifiers. IEEE Access 12: 131906-131914 (2024)
2023
[j1]
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B. Mounika, J. Ajayan, Sandip Bhattacharya, D. Nirmal, V. Bharath Sreenivasulu, N. Aruna Kumari:
Investigation on effect of AlN barrier thickness and lateral scalability of Fe-doped recessed T-gate AlN/GaN/SiC HEMT with polarization-graded back barrier for future RF electronic applications. Microelectron. J. 140: 105923 (2023)

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