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Pradyot Yadav

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2020 – today

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2024
[c3]
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  dblp key:
  - conf/drc/NiroulaTXYLZP24
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  persistent URL:
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John Niroula, Matthew A. Taylor, Qingyun Xie, Pradyot Yadav, Shisong Luo, Yuji Zhao, Tomás Palacios:
Record High Temperature Performance in Scaled AlGaN/GaN-on-Si HEMTs up to 500°C. DRC 2024: 1-2
2023
[c2]
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Pradyot Yadav, Qingyun Xie, John Niroula, Gillian K. Micale, Hridibrata Pal, Tomás Palacios:
First Demonstration of GaN RF HEMTs on Engineered Substrate. DRC 2023: 1-2
[c1]
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Qingyun Xie, Mengyang Yuan, John Niroula, Bejoy Sikder, Shisong Luo, Kai Fu, Nitul S. Rajput, Ayan Biswas Pranta, Pradyot Yadav, Yuji Zhao, Nadim Chowdhury, Tomás Palacios:
Towards DTCO in High Temperature GaN-on-Si Technology: Arithmetic Logic Unit at 300 °C and CAD Framework up to 500 °C. VLSI Technology and Circuits 2023: 1-2

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