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Xing-Chen Mai

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Conference and Workshop Papers

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2023
[c4]
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  - conf/icce-tw/YangMCCLL23
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Xiu-Yuan Yang, Xing-Chen Mai, Shen-Li Chen, Yu-Jie Chung, Jhong-Yi Lai, Ting-En Lin:
ESD-capability Study of High-voltage nLDMOSs with out the Drift Region DPW Effect. ICCE-Taiwan 2023: 223-224
[c3]
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Ting-En Lin, Shen-Li Chen, Zhi-Wei Liu, Xing-Chen Mai, Xiu-Yuan Yang, Yu-Jie Chung:
High-voltage nLDMOS Drain Side Schottky/SCR Modulations for Enhancement Reliability Capabilities. ICCE-Taiwan 2023: 225-226
2022
[c2]
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  - conf/icce-tw/LaiCLMC22
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Jhong-Yi Lai, Shen-Li Chen, Zhi-Wei Liu, Xing-Chen Mai, Yu-Jie Chung:
ESD Capability Analysis of High-voltage nLDMOSs by the Bulk Terminal Modulation. ICCE-TW 2022: 71-72
[c1]
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Zhi-Wei Liu, Shen-Li Chen, Jhong-Yi Lai, Xing-Chen Mai, Yu-Jie Chung:
An Investigation of ESD-Enhancement by the Drain-side Embedded SCR Area Modulation for HV pLDMOSs. ICCE-TW 2022: 73-74

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