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M. G. Gottwald

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2024
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M. G. Gottwald, Guohan Hu, Philip Louis Trouilloud, L. Rehm, C. Safranski, G. Kim, S. L. Brown, J. Bruley, C. P. D'Emic, O. Gunawan, H. Jung, C. Lavoie, J. Lee, J. Liang, M. Robbins, J. Z. Sun, P. Hashemi, Daniel Christopher Worledge:
First Demonstration of High Retention Energy Barriers and 2 ns Switching, Using Magnetic Ordered-Alloy-Based STT MRAM Devices. VLSI Technology and Circuits 2024: 1-2
2022
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C. Safranski, Guohan Hu, J. Z. Sun, P. Hashemi, S. L. Brown, L. Buzi, C. P. D'Emic, E. R. J. Edwards, Eileen A. Galligan, M. G. Gottwald, O. Gunawan, S. Karimeddiny, H. Jung, J. Kim, Kenneth F. Latzko, Philip Louis Trouilloud, S. Zare, Daniel Christopher Worledge:
Reliable Sub-nanosecond MRAM with Double Spin-torque Magnetic Tunnel Junctions. VLSI Technology and Circuits 2022: 288-289

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