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Seiichiro Higashi
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2010 – 2019
- 2013
- [j9]Kuniaki Hashimoto, Akio Ohta, Hideki Murakami, Seiichiro Higashi, Seiichi Miyazaki:
Control of Interfacial Reaction of HfO2/Ge Structure by Insertion of Ta Oxide Layer. IEICE Trans. Electron. 96-C(5): 674-679 (2013) - [j8]Akio Ohta, Katsunori Makihara, Mitsuhisa Ikeda, Hideki Murakami, Seiichiro Higashi, Seiichi Miyazaki:
Evaluation of Chemical Composition and Bonding Features of Pt/SiOx/Pt MIM Diodes and Its Impact on Resistance Switching Behavior. IEICE Trans. Electron. 96-C(5): 702-707 (2013) - 2012
- [j7]Akio Ohta, Yuta Goto, Shingo Nishigaki, Guobin Wei, Hideki Murakami, Seiichiro Higashi, Seiichi Miyazaki:
Characterization of Resistance-Switching of Si Oxide Dielectrics Prepared by RF Sputtering. IEICE Trans. Electron. 95-C(5): 879-884 (2012) - 2011
- [j6]Guobin Wei, Yuta Goto, Akio Ohta, Katsunori Makihara, Hideki Murakami, Seiichiro Higashi, Seiichi Miyazaki:
Impact of Annealing Ambience on Resistive Switching in Pt/TiO2/Pt Structure. IEICE Trans. Electron. 94-C(5): 699-704 (2011) - [j5]Akio Ohta, Daisuke Kanme, Hideki Murakami, Seiichiro Higashi, Seiichi Miyazaki:
Characterization of Mg Diffusion into HfO2/SiO2/Si(100) Stacked Structures and Its Impact on Detect State Densities. IEICE Trans. Electron. 94-C(5): 717-723 (2011)
2000 – 2009
- 2008
- [j4]Katsunori Makihara, Mitsuhisa Ikeda, Seiichiro Higashi, Seiichi Miyazaki:
Progress on Charge Distribution in Multiply-Stacked Si Quantum Dots/SiO2 Structure as Evaluated by AFM/KFM. IEICE Trans. Electron. 91-C(5): 712-715 (2008) - 2007
- [j3]Yanli Pei, Hideki Murakami, Seiichiro Higashi, Seiichi Miyazaki, Seiji Inumiya, Yasuo Nara:
Evaluation of Dielectric Reliability of Ultrathin HfSiOxNy in Metal-Gate Capacitors. IEICE Trans. Electron. 90-C(5): 962-967 (2007) - 2005
- [j2]Hideki Murakami, Yoshikazu Moriwaki, Masafumi Fujitake, Daisuke Azuma, Seiichiro Higashi, Seiichi Miyazaki:
Characterization of Atom Diffusion in Polycrystalline Si/SiGe/Si Stacked Gate. IEICE Trans. Electron. 88-C(4): 646-650 (2005) - [j1]Katsunori Makihara, Yoshihiro Okamoto, Hideki Murakami, Seiichiro Higashi, Seiichi Miyazaki:
Characterization of Germanium Nanocrystallites Grown on SiO2 by a Conductive AFM Probe Technique. IEICE Trans. Electron. 88-C(4): 705-708 (2005)
Coauthor Index
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