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Valeria Kilchytska
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Journal Articles
- 2013
- [j6]El Hafed Boufouss, Laurent A. Francis
, Valeria Kilchytska
, Pierre Gérard, Pascal Simon, Denis Flandre
:
Ultra-Low Power High Temperature and Radiation Hard Complementary Metal-Oxide-Semiconductor (CMOS) Silicon-on-Insulator (SOI) Voltage Reference. Sensors 13(12): 17265-17280 (2013) - 2012
- [j5]Valeria Kilchytska
, Joaquín Alvarado
, S. Put, Nadine Collaert, Eddy Simoen, Cor Claeys, Otilia Militaru, Guy Berger, Denis Flandre
:
High-energy neutrons effect on strained and non-strained SOI MuGFETs and planar MOSFETs. Microelectron. Reliab. 52(1): 118-123 (2012) - 2011
- [j4]C. Roda Neve, Valeria Kilchytska
, Joaquín Alvarado
, Dimitri Lederer, O. Militaru, Denis Flandre
, Jean-Pierre Raskin:
Impact of neutron irradiation on the RF properties of oxidized high-resistivity silicon substrates with and without a trap-rich passivation layer. Microelectron. Reliab. 51(2): 326-331 (2011) - [j3]Joaquín Alvarado
, Valeria Kilchytska
, El Hafed Boufouss, Denis Flandre
:
Characterization and modelling of single event transients in LDMOS-SOI FETs. Microelectron. Reliab. 51(9-11): 2004-2009 (2011) - 2010
- [j2]Joaquín Alvarado
, El Hafed Boufouss, Valeria Kilchytska
, Denis Flandre
:
Compact model for single event transients and total dose effects at high temperatures for partially depleted SOI MOSFETs. Microelectron. Reliab. 50(9-11): 1852-1856 (2010) - 2007
- [j1]Joaquín Alvarado
, Antonio Cerdeira, Valeria Kilchytska
, Denis Flandre
:
Harmonic distortion analysis using an improved charge sheet model for PD SOI MOSFETs. Microelectron. J. 38(3): 321-326 (2007)
Conference and Workshop Papers
- 2019
- [c6]Lucas Nyssens, Arka Halder
, Babak Kazemi Esfeh, Nicolas Planes, Michel Haond, Denis Flandre, Jean-Pierre Raskin, Valeriya Kilchytska
:
Self-Heating in 28 FDSOI UTBB MOSFETs at Cryogenic Temperatures. ESSDERC 2019: 162-165 - 2017
- [c5]B. Kazemi Esfeh, Valeria Kilchytska
, Bertrand Parvais, Nicolas Planes, M. Haond, Denis Flandre
, Jean-Pierre Raskin:
Back-gate bias effect on UTBB-FDSOI non-linearity performance. ESSDERC 2017: 148-151 - [c4]K. Ben Ali, P. M. Gammon, C. W. Chan, F. Li, V. Pathirana, T. Trajkovic, Farzan Gity
, Denis Flandre
, Valeria Kilchytska
:
Single event effects and total ionising dose in 600V Si-on-SiC LDMOS transistors for rad-hard space applications. ESSDERC 2017: 236-239 - 2014
- [c3]Sergej Makovejev, B. Kazemi Esfeh, Jean-Pierre Raskin, Valeria Kilchytska
, Denis Flandre
, V. Barral, Nicolas Planes, M. Haond:
Variability of UTBB MOSFET analog figures of merit in wide frequency range. ESSDERC 2014: 222-225 - 2013
- [c2]Sergej Makovejev, Babak Kazemi Esfeh, Jean-Pierre Raskin, Denis Flandre
, Valeria Kilchytska
, François Andrieu:
Threshold voltage extraction techniques and temperature effect in context of global variability in UTBB mosfets. ESSDERC 2013: 194-197 - 2012
- [c1]Valeria Kilchytska
, Denis Flandre
, François Andrieu:
On the UTBB SOI MOSFET performance improvement in quasi-double-gate regime. ESSDERC 2012: 246-249
Coauthor Index
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