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Daehwan Jung
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2010 – 2019
- 2019
- [c8]Jian Huang, Yating Wan, Daehwan Jung, Justin Norman, Chen Shang, Qiang Li, Kei May Lau, Arthur C. Gossard, John E. Bowers, Baile Chen:
Defect characterization of InAs/InGaAs quantum dot photodetector grown on GaAs-on-V-grooved-Si substrate. DRC 2019: 165-166 - [c7]John E. Bowers, Duanni Huang, Daehwan Jung, Justin Norman, Minh A. Tran, Yating Wan, Weiqiang Xie, Zeyu Zhang:
Realities and Challenges of III-V/Si Integration Technologies. OFC 2019: 1-3 - [c6]Songtao Liu, Daehwan Jung, Justin C. Norman, M. J. Kennedy, Arthur C. Gossard, John E. Bowers:
A Low-Noise High-Channel-Count 20 GHz Passively Mode Locked Quantum Dot Laser Grown on Si. OFC 2019: 1-3 - [c5]Xinru Wu, Songtao Liu, Daehwan Jung, Justin C. Norman, M. J. Kennedy, Hon Ki Tsang, Arthur C. Gossard, John E. Bowers:
Terabit Interconnects with a 20-GHz O-Band Passively Mode Locked Quantum Dot Laser Grown Directly on Silicon. OFC 2019: 1-3 - [c4]Songtao Liu, Xinru Wu, Minh A. Tran, Duanni Huang, Justin Norman, Daehwan Jung, Arthur Gossard, John E. Bowers:
High performance lasers on Si. OECC/PSC 2019: 1-3 - 2018
- [c3]Songtao Liu
, Justin C. Norman, Daehwan Jung, M. J. Kennedy, Arthur C. Gossard, John E. Bowers:
9 GHz passively mode locked quantum dot lasers directly grown on Si. DRC 2018: 1-2 - [c2]Daisuke Inoue, Daehwan Jung, Justin Norman, Yating Wan, Nobuhiko Nishiyama
, Shigehisa Arai, Arthur C. Gossard, John E. Bowers:
NRZ and PAM-4 Direct Modulation of 1.3µm Quantum Dot Lasers Grown Directly on On-Axis (001) Si. ECOC 2018: 1-3 - [c1]Daehwan Jung, Justin Norman, M. J. Kennedy, Robert Herrick, Chen Shang, Catherine Jan, Arthur C. Gossard, John E. Bowers:
Low Threshold Current 1.3 μm Fabry-Perot III-V Quantum Dot Lasers on (001) Si with Superior Reliability. OFC 2018: 1-3
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