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Fabian J. Klüpfel

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Journal Articles

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2019
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Fabian J. Klüpfel:
A Compact Model Based on Bardeen's Transfer Hamiltonian Formalism for Silicon Single Electron Transistors. IEEE Access 7: 84053-84065 (2019)
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Fabian J. Klüpfel:
Influence of Sacrificial Layer Germanium Content on Stacked-Nanowire FET Performance. IEEE Access 7: 85855-85859 (2019)

Conference and Workshop Papers

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2018
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Esteve Amat, Alberto del Moral, Joan R. Bausells, Francesc Pérez-Murano, Fabian J. Klüpfel:
Quantum dot location relevance into SET-FET circuits based on FinFET devices. DCIS 2018: 1-5

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