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ORCIDTae-Hyeon Kim 0004
Person information
- affiliation: Seoul National University of Science and Technology, Seoul, South Korea
Other persons with the same name
- Taehyeon Kim (aka: Tae-Hyeon Kim) — disambiguation page
- Tae-Hyeon Kim 0007 (aka: Taehyeon Kim 0007) — Hanyang University, Department of Computer Science and Engineering, Ansan, South Korea
- Taehyeon Kim 0001
![[0000-0003-4076-9175]](https://dblp.uni-trier.de/img/orcid-mark.12x12.png "0000-0003-4076-9175")
— Korea Advanced Institute of Science and Technology (KAIST), Graduate School of Artificial Intelligence, Seoul, South Korea - Taehyeon Kim 0002 (aka: TaeHyeon Kim 0002) — Purdue University, Department of Computer and Information Technology, SMART Lab, West Lafayette, IN, USA (and 1 more)
- Taehyeon Kim 0003 — Korea Electronics Technology Institute (KETI), Contents Convergence Research Center, Seoul, South Korea
- Taehyeon Kim 0005 — Korea Advanced Institute of Science and Technology (KAIST), Daejeon, South Korea
- Taehyeon Kim 0006 — Gwangju Institute of Science and Technology (GIST), Meta-Evolutionary Machine Intelligence Laboratory (MEMI), Gwangju, South Korea
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2020 – today
- 2025
[j9]Choong-Ki Kim, James Read, Minji Shon, Tae-Hyeon Kim, Myung-Su Kim, Ji-Man Yu, Min-Soo Yoo, Yang-Kyu Choi, Shimeng Yu:
Capacitive Synaptor with Gate Surrounding Semiconductor Pillar Structure and Overturned Charge Injection for Compute-in-Memory. Adv. Intell. Syst. 7(2) (2025)- 2024
- [j8]Shimeng Yu, Tae-Hyeon Kim:
Semiconductor Memory Technologies: State-of-the-Art and Future Trends. Computer 57(4): 150-154 (2024) - [j7]Sangwook Youn, Yeongjin Hwang, Tae-Hyeon Kim, Sungjoon Kim, Hwiho Hwang, Jinwoo Park, Hyungjin Kim:
Threshold learning algorithm for memristive neural network with binary switching behavior. Neural Networks 176: 106355 (2024) - [c1]Tae-Hyeon Kim, Yuan-Chun Luo, Omkar Phadke, James Read, Shimeng Yu:
Engineering nvCap From FEOL to BEOL with Ferroelectric Small-signal Non-destructive Read. IMW 2024: 1-4 - 2023
- [j6]Sangwook Youn, Sungjoon Kim, Tae-Hyeon Kim, Jinwoo Park, Hyungjin Kim:
Memristor Crossbar Circuit for Ternary Content-Addressable Memory with Fine-Tuning Operation. Adv. Intell. Syst. 5(3) (2023) - [j5]Min Suk Song, Tae-Hyeon Kim, Hwiho Hwang, Suhyeon Ahn, Hussein Nili, Hyungjin Kim:
Optimization of Random Telegraph Noise Characteristics in Memristor for True Random Number Generator. Adv. Intell. Syst. 5(5) (2023) - 2022
- [j4]Sungjoon Kim, Jinwoo Park, Tae-Hyeon Kim, Kyungho Hong, Yeongjin Hwang, Byung-Gook Park, Hyungjin Kim:
4-bit Multilevel Operation in Overshoot Suppressed Al2O3/TiOx Resistive Random-Access Memory Crossbar Array. Adv. Intell. Syst. 4(9) (2022) - 2021
- [j3]Dayoung Kim, Tae-Hyeon Kim, Yun-Yeong Choi, Geun Ho Lee, Jungwon Lee, Wookyung Sun, Byung-Gook Park, Hyungjin Kim, Hyungsoon Shin:
Selected Bit-Line Current PUF: Implementation of Hardware Security Primitive Based on a Memristor Crossbar Array. IEEE Access 9: 120901-120910 (2021) - 2020
- [j2]Ji-Ho Ryu, Boram Kim, Fayyaz Hussain, Muhammad Ismail, Chandreswar Mahata, Teresa Oh, Muhammad Imran, Kyung Kyu Min, Tae-Hyeon Kim, Byung-Do Yang, Seongjae Cho, Byung-Gook Park, Yoon Kim, Sungjun Kim:
Zinc Tin Oxide Synaptic Device for Neuromorphic Engineering. IEEE Access 8: 130678-130686 (2020) - [j1]Yeon-Joon Choi, Min-Hwi Kim, Suhyun Bang, Tae-Hyeon Kim, Dong Keun Lee, Kyungho Hong, Chae Soo Kim, Sungjun Kim, Seongjae Cho, Byung-Gook Park:
Insertion of Ag Layer in TiN/SiNx/TiN RRAM and Its Effect on Filament Formation Modeled by Monte Carlo Simulation. IEEE Access 8: 228720-228730 (2020)
Coauthor Index
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