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Fábio G. R. G. da Silva
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2020 – today
- 2022
- [j2]Fábio G. R. G. da Silva, Rafael N. M. Oliveira
, Alexandra L. Zimpeck, Cristina Meinhardt
, Ricardo Reis:
Exploring XOR-based Full Adders and decoupling cells to variability mitigation at FinFET technology. Integr. 87: 137-146 (2022) - [c7]Rafael N. M. Oliveira
, Fábio G. R. G. da Silva, Ricardo Reis, Rafael B. Schvittz, Cristina Meinhardt
:
Improving Soft Error Robustness of Full Adder Circuits with Decoupling Cell and Transistor Sizing. SBCCI 2022: 1-6 - 2021
- [c6]Rafael N. M. Oliveira
, Fábio G. R. G. da Silva, Ricardo Reis, Cristina Meinhardt
:
SET Mitigation Techniques on Mirror Full Adder at 7 nm FinFET Technology. LATS 2021: 1-2 - 2020
- [c5]Rafael N. M. Oliveira
, Fábio G. R. G. da Silva, Ricardo Reis, Cristina Meinhardt
:
Mirror Full Adder SET Susceptibility on 7nm FinFET Technology. ICECS 2020: 1-4 - [c4]Fabio G. Rossato G. da Silva, Cristina Meinhardt
, Ricardo Reis:
Mitigation Effects of Decoupling Cells on Full Adders Process Variability. MWSCAS 2020: 317-320
2010 – 2019
- 2019
- [c3]Fabio G. Rossato G. da Silva, Cristina Meinhardt
, Ricardo Augusto da Luz Reis:
FinFET Variability and Near-threshold operation: Impact on Full Adders design using XOR Blocks. ICECS 2019: 638-641 - 2018
- [j1]Roberto B. Almeida, Cleiton Magano Marques
, Paulo F. Butzen
, Fábio G. R. G. da Silva, Ricardo A. L. Reis
, Cristina Meinhardt
:
Analysis of 6 T SRAM cell in sub-45 nm CMOS and FinFET technologies. Microelectron. Reliab. 88-90: 196-202 (2018) - [c2]Fabio G. Rossato G. da Silva, Cristina Meinhardt
, Ricardo Reis
:
Impact of Near-Threshold and Variability on 7nm FinFET XOR Circuits. ICECS 2018: 573-576 - 2016
- [c1]Fábio G. R. G. da Silva, Paulo F. Butzen
, Cristina Meinhardt
:
PVT variability analysis of FinFET and CMOS XOR circuits at 16nm. ICECS 2016: 528-531
Coauthor Index
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