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ORCIDPavel Hazdra
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2020 – today
- 2024
[j10]Michal Pokorny, Ivo Vertat, David Pánek, Pavel Hazdra, Milan Svanda, Jan Kracek, Milos Mazanek, Jiri Masopust, Pavel Karban:
Reconfigurable Antenna Array Testbed for Quantized Controlling. IEEE Access 12: 11458-11469 (2024)- 2020
- [j9]Mojtaba Mansour Abadi
, Pavel Hazdra, Jan Bohata, Petr Chvojka, Paul Anthony Haigh, Zabih Ghassemlooy, Stanislav Zvanovec:
A Head/Taillight Featuring Hybrid Planar Visible Light Communications/Millimetre Wave Antenna for Vehicular Communications. IEEE Access 8: 135722-135729 (2020) - [c2]Jan Bohata, Tomás Lonský, Jan Spácil, Pavel Hazdra, Zdenek Hradecký, Matej Komanec, Stanislav Zvánovec, Luis Vallejo, Beatriz Ortega:
Antenna Phased Array Beamforming at 26 GHz Using Optical True Time-Delay. CSNDSP 2020: 1-4
2010 – 2019
- 2017
- [j8]Stanislav Popelka, Pavel Hazdra, V. Záhlava:
Operation of 4H-SiC high voltage normally-OFF V-JFET in radiation hard conditions: Simulations and experiment. Microelectron. Reliab. 74: 58-66 (2017) - 2015
- [c1]Rupendra Kumar Sharma, Pavel Hazdra, Stanislav Popelka:
Simulation and characterization of ion irradiated 4H-SiC JBS diode. MIXDES 2015: 567-570
2000 – 2009
- 2008
- [j7]J. Vobecký, Pavel Hazdra:
Dynamic avalanche in diodes with local lifetime control by means of palladium. Microelectron. J. 39(6): 878-883 (2008) - [j6]Pavel Hazdra, Jan Voves, J. Oswald, K. Kuldová, A. Hospodková, Eduard Hulicius, Jirí Pangrác:
Optical characterisation of MOVPE grown vertically correlated InAs/GaAs quantum dots. Microelectron. J. 39(8): 1070-1074 (2008) - 2007
- [j5]Pavel Hazdra, V. Komarnitskyy:
Local lifetime control in silicon power diode by ion irradiation: introduction and stability of shallow donors. IET Circuits Devices Syst. 1(5): 321-326 (2007) - 2006
- [j4]Pavel Hazdra, V. Komarnitskyy:
Lifetime control in silicon power P-i-N diode by ion irradiation: Suppression of undesired leakage. Microelectron. J. 37(3): 197-203 (2006) - 2004
- [j3]Pavel Hazdra, Jan Vobecký, H. Dorschner, K. Brand:
Axial lifetime control in silicon power diodes by irradiation with protons, alphas, low- and high-energy electrons. Microelectron. J. 35(3): 249-257 (2004) - 2003
- [j2]J. Vobecký, Pavel Hazdra, V. Záhlava:
Impact of the electron, proton and helium irradiation on the forward I-V characteristics of high-power P-i-N diode. Microelectron. Reliab. 43(4): 537-544 (2003) - [j1]J. Vobecký, Pavel Hazdra:
Advanced Local Lifetime Control for Higher Reliability of Power Devices. Microelectron. Reliab. 43(9-11): 1883-1888 (2003)
Coauthor Index
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