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ORCIDTrupti Ranjan Lenka
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2020 – today
- 2026
[j4]Trupti Ranjan Lenka, Mano Bala Sankar Muthu, Injamamul Hoque Emu, Tanjim Rahman, Marshall Debenedictis, Hieu Pham Trung Nguyen:
Resilient high-temperature operation of GaN-on-SiC HEMTs with stable DC characteristics up to 600 °C. Microelectron. J. 168: 107019 (2026)- 2025
- [c5]Marko S. Andjelkovic, Junchao Chen, Jelisaveta Aleksic, Vishnu Padmakumar
, Milos Marjanovic, Nikolaos Zazatis, Trupti Ranjan Lenka, Danijel Dankovic, Christos P. Sotiriou, Fabian Vargas:
Prediction of Single Event Transient Propagation Using Machine Learning Models. SMACD 2025: 1-4 - 2024
- [c4]Nour El I. Boukortt, Antonio Garcia Loureiro, Salvatore Patanè, Mohamed Trabelsi, Trupti Ranjan Lenka, Ahmad Abushattal:
Rear-Passivation Effect on Thin-Film Perovskite/u-CIGS Tandem Solar Cell Performance. IECON 2024: 1-6 - 2023
- [c3]Samadrita Das, Trupti Ranjan Lenka, Fazal Ahmed Talukdar, Hieu Pham Trung Nguyen:
Design of Deep-UV Nanowire LED with Al2O3 Quantum Dots and Step-Graded n-Type AlInGaN Electron Blocking Layer for High Quantum Efficiency. IECON 2023: 1-5 - [c2]G. Purnachandra Rao, Trupti Ranjan Lenka, Hieu Pham Trung Nguyen:
Performance Analysis of Gate Engineered III-Nitride/ $\beta$-Ga2O3 Nano-HEMT for High-Power Nanoelectronics. ISCAS 2023: 1-4 - 2022
- [c1]Nour El I. Boukortt, Alamera Nouran Alquennah, Amal M. AlAmri, Salvatore Patanè, Trupti Ranjan Lenka, Rabin Paul:
Photogeneration losses from interface trap density in Passivated Ultrathin CIGS Solar Cell. IECON 2022: 1-6 - 2020
- [j3]Deepak Kumar Panda, Rajan Singh, Trupti Ranjan Lenka, Thi Tan Pham, Ravi Teja Velpula, Barsha Jain, Ha Quoc Thang Bui, Hieu Pham Trung Nguyen:
Single and double-gate based AlGaN/GaN MOS-HEMTs for the design of low-noise amplifiers: a comparative study. IET Circuits Devices Syst. 14(7): 1018-1025 (2020)
2010 – 2019
- 2018
- [j2]Deepak Kumar Panda, Trupti Ranjan Lenka:
Compact thermal noise model for enhancement mode N-polar GaN MOS-HEMT including 2DEG density solution with two sub-bands. IET Circuits Devices Syst. 12(6): 810-816 (2018) - 2016
- [j1]Kanjalochan Jena, Raghunandan Swain, Trupti Ranjan Lenka:
Effect of thin gate dielectrics on DC, radio frequency and linearity characteristics of lattice-matched AlInN/AlN/GaN metal-oxide-semiconductor high electron mobility transistor. IET Circuits Devices Syst. 10(5): 423-432 (2016)
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