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Jerry L. Hudgins

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affiliation: University of Nebraska, Lincoln, NE, USA

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Books and Theses

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2013
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  - series/synthesis/2013Gachovska
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Tanya K. Gachovska, Jerry L. Hudgins, Enrico Santi, Angus T. Bryant, Patrick R. Palmer:
Modeling Bipolar Power Semiconductor Devices. Synthesis Lectures on Power Electronics, Morgan & Claypool Publishers 2013, ISBN 978-3-031-01370-6, pp. 1-93
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Tanya K. Gachovska, Bin Du, Jerry L. Hudgins, Enrico Santi:
Transient Electro-Thermal Modeling of Bipolar Power Semiconductor Devices. Synthesis Lectures on Power Electronics, Morgan & Claypool Publishers 2013, ISBN 978-3-031-01378-2, pp. 1-84

Conference and Workshop Papers

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2008
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Elisa Platania, Zhiyang Chen, Filippo Chimento, Liqing Lu, Enrico Santi, Angelo Raciti, Jerry L. Hudgins, H. Alan Mantooth, David C. Sheridan, J. Cassady:
A Physics-Based Model for a SiC JFET Device Accounting for the Mobility Dependence on Temperature and Electric Field. IAS 2008: 1-8
2007
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L. Lu, Z. Chen, Angus T. Bryant, Enrico Santi, Jerry L. Hudgins, Patrick R. Palmer:
Modeling of MOS-Side Carrier Injection in Trench-Gate IGBTs. IAS 2007: 342-349
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Enrico Santi, Jerry L. Hudgins, H. Alan Mantooth:
Variable model levels for power semiconductor devices. SCSC 2007: 276-283
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Enrico Santi, Liqubf Lu, Zhiyang Chen, Jerry L. Hudgins, H. Alan Mantooth:
Simulating power semiconductor devices using variable model levels. SCSC 2007: 284-292

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