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Tamio Ikehashi
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2020 – today
- 2024
- [j3]Menghan Song, Tamio Ikehashi:
A Capacitance Varying Charge Pump with Exponential Stage-Number Dependence and Its Implementation by MEMS Technology. IEICE Trans. Electron. 107(1): 1-11 (2024)
2010 – 2019
- 2017
- [c2]Yoshihiko Kurui, Hideyuki Tomizawa, Akira Fujimoto, Tomohiro Saito, Akihiro Kojima, Tamio Ikehashi, Yoshiaki Sugizaki, Hideki Shibata:
The effects of poly-SiGe on sensing properties for ultra-low-power CMOS-embedded MEMS sensors. IEEE SENSORS 2017: 1-3
2000 – 2009
- 2008
- [c1]Tamio Ikehashi, Takayuki Miyazaki, Hiroaki Yamazaki, Atsushi Suzuki, Etsuji Ogawa, Shinji Miyano, Tomohiro Saito, Tatsuya Ohguro, Takeshi Miyagi, Yoshiaki Sugizaki, Nobuaki Otsuka, Hideki Shibata, Yoshiaki Toyoshima:
An RF MEMS Variable Capacitor with Intelligent Bipolar Actuation. ISSCC 2008: 582-583 - 2002
- [j2]Kenichi Imamiya, Hiroshi Nakamura, Toshihiko Himeno, Toshio Yamamura, Tamio Ikehashi, Ken Takeuchi, Kazushige Kanda, Koji Hosono, Takuya Futatsuyama, Koichi Kawai, Riichiro Shirota, Norihisa Arai, Fumitaka Arai, Kazuo Hatakeyama, Hiroaki Hazama, Masanobu Saito, Hisataka Meguro, Kevin Conley, Khandker Quader, Jian J. Che:
A 125-mm2 1-Gb NAND flash memory with 10-MByte/s program speed. IEEE J. Solid State Circuits 37(11): 1493-1501 (2002)
1990 – 1999
- 1999
- [j1]Kenichi Imamiya, Yoshihisa Sugiura, Hiroshi Nakamura, Toshihiko Himeno, Ken Takeuchi, Tamio Ikehashi, Kazushige Kanda, Koji Hosono, Riichiro Shirota, Seiichi Aritome, Kazuhiro Shimizu, Kazuo Hatakeyama, Koji Sakui:
A 130-mm/2, 256-Mbit NAND flash with shallow trench isolation technology. IEEE J. Solid State Circuits 34(11): 1536-1543 (1999)
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