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ORCIDAsif Khan 0011
Person information
- affiliation: University of South Carolina, College of Engineering and Computing, Columbia, SC, USA
- affiliation (PhD 1979): Massachusetts Institute of Technology (MIT), Cambridge, MA, USA
Other persons with the same name
- Asif Khan — disambiguation page
- Asif Khan 0001
![[0000-0001-9290-1313]](https://dblp.uni-trier.de/img/orcid-mark.12x12.png "0000-0001-9290-1313")
— Aligarh Muslim University, Department of Mathematics, India - Asif Khan 0002 — Karakoram International University, Gilgit, Pakistan (and 1 more)
- Asif Khan 0003 — Ghulam Ishaq Khan Institute of Engineering Sciences and Technology, Topi, Pakistan (and 3 more)
- Asif Khan 0004 — London South Bank University, School of Engineering, Division of Electrical and Electronic Engineering, UK
- Asif Khan 0005 — Massachusetts Institute of Technology, CSAIL, Cambridge, MA, USA
- Asif Khan 0006 — COMSATS Institute of Information Technology, Islamabad, Pakistan
- Asif Khan 0007 — University of Electronic Science and Technology of China, School of Computer Science and Engineering, Chengdu, China
- Mohammad Asif Khan 0001 (aka: Asif Khan 0008) — University of Edinburgh, UK (and 1 more)
- Asif Khan 0009 — Chennai Mathematical Institute, India
- Asif Khan 0010 — Dongguk University, Department of Mechanical, Robotics and Energy Engineering, Seoul, Korea
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2020 – today
- 2024
[c3]Jiahao Chen, Kenneth Stephenson, Md Abdullah Mamun, Zehuan Wang, Parthasarathy Seshadri, Asif Khan, Chirag Gupta:
Al0.87Ga0.13N/Al0.64Ga0.36N HFET with fT >17 GHz and Vbr > 360 V. DRC 2024: 1-2
2010 – 2019
- 2019
- [c2]Hao Xue, Choong Hee Lee, Kamal Hussian, Towhidur Razzak, Mamun Abdullah, Zhanbo Xia, Shahadat Hasan Sohel, Asif Khan, Siddharth Rajan, Wu Lu:
RF Performance of 130 nm Al0.75Ga0.25N/Al0.6Ga0.4N HFETs with MBE-Regrown Contacts. DRC 2019: 157-158 - 2018
- [c1]Hao Xue, Towhidur Razzak, Seongmo Hwang, Antwon Coleman, Sanyam Bajaj, Yuewei Zhang, Zane Jamal-Eddin, Shahadat Hasan Sohel, Asif Khan, Siddharth Rajan, Wu Lu:
All MOCVD grown 250 nm gate length Al0.70Ga0.30N MESFETs. DRC 2018: 1-2
Coauthor Index
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