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Ignasi Cortés
Person information
- affiliation: Spanish National Research Council, Barcelona, Spain
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2010 – 2019
- 2012
- [j7]Ignasi Cortés, Gaëtan Toulon, Frederic Morancho, E. Hugonnard-Bruyere, B. Villard, W. J. Toren:
Analysis and optimization of lateral thin-film Silicon-on-insulator (SOI) MOSFET transistors. Microelectron. Reliab. 52(3): 503-508 (2012) - [j6]Ignasi Cortés, Xavier Perpiñà
, Jesús Urresti
, Xavier Jordà
, José Rebollo
:
Study of layout influence on ruggedness of NPT-IGBT devices by physical modelling. Microelectron. Reliab. 52(9-10): 2471-2476 (2012) - 2011
- [j5]Xavier Perpiñà
, Jean-François Serviere, Jesús Urresti-Ibañez
, Ignasi Cortés, Xavier Jordà
, Salvador Hidalgo
, José Rebollo
, Michel Mermet-Guyennet:
Analysis of Clamped Inductive Turnoff Failure in Railway Traction IGBT Power Modules Under Overload Conditions. IEEE Trans. Ind. Electron. 58(7): 2706-2714 (2011)
2000 – 2009
- 2008
- [j4]Ignasi Cortés, Pablo Fernández-Martínez
, David Flores
, Salvador Hidalgo
, José Rebollo
:
Superjunction LDMOS on thick-SOI technology for RF applications. Microelectron. J. 39(6): 922-927 (2008) - [j3]Ignasi Cortés, Pablo Fernández-Martínez
, David Flores
, Salvador Hidalgo
, José Rebollo
:
Analysis of punch-through breakdown in bulk silicon RF power LDMOS transistors. Microelectron. Reliab. 48(2): 173-180 (2008) - 2005
- [j2]Ignasi Cortés, Jaume Roig, David Flores
, Jesús Urresti
, Salvador Hidalgo
, José Rebollo
:
Analysis of hot-carrier degradation in a SOI LDMOS transistor with a steep retrograde drift doping profile. Microelectron. Reliab. 45(3-4): 493-498 (2005) - [j1]Jesús Urresti
, Salvador Hidalgo
, David Flores
, Jaume Roig, Ignasi Cortés, José Rebollo
:
Lateral punch-through TVS devices for on-chip protection in low-voltage applications. Microelectron. Reliab. 45(7-8): 1181-1186 (2005)
Coauthor Index
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