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Yangbo Yi

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2010 – 2019

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2016
[j5]
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  - journals/iet-cds/ZhuZSLDY16
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  - https://dblp.org/rec/journals/iet-cds/ZhuZSLDY16
Jing Zhu, Yunwu Zhang, Weifeng Sun, Yangyang Lu, Yicheng Du, Yangbo Yi:
Bipolar gate drive integrated circuit for insulated gate bipolar transistor to achieve better tradeoff between the turn-off losses and collector voltage overshoot. IET Circuits Devices Syst. 10(5): 410-416 (2016)
2014
[j4]
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Jing Zhu, Yunwu Zhang, Weifeng Sun, Yangbo Yi:
Low-jitter, high-linearity current-controlled complementary metal oxide semiconductor relaxation oscillator with optimised floating capacitors. IET Circuits Devices Syst. 8(6): 509-515 (2014)

2000 – 2009

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2008
[j3]
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Weifeng Sun, Haisong Li, Yangbo Yi, Hong Wu, Longxing Shi:
Bulk-silicon power integrated circuit technology for 192-channel data driver ICs of plasma display panel. IET Circuits Devices Syst. 2(2): 277-280 (2008)
[j2]
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  - journals/mr/WuSYLS08
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Hong Wu, Weifeng Sun, Yangbo Yi, Haisong Li, Longxing Shi:
The degradation mechanisms in high voltage pLEDMOS transistor with thick gate oxide. Microelectron. Reliab. 48(11-12): 1804-1808 (2008)
2006
[j1]
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Zhilin Sun, Weifeng Sun, Yangbo Yi, Longxing Shi:
Study of the power capability of LDMOS and the improved methods. Microelectron. Reliab. 46(5-6): 1001-1005 (2006)

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