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2020 – today
- 2022
[j8]Sheng-Lyang Jang
, Wen-Cheng Lai, Yong-Jun Chang, Dan-Li Wang, Miin-Horng Juang:
CMOS Injection-Locked Frequency Quadrupler/Quintupler. IEEE Access 10: 78168-78175 (2022)- 2021
- [j7]Sheng-Lyang Jang, Chia-Tung Hsieh, Tzu-Chin Yang, Miin-Horng Juang:
Current Reused 8: 1 Injection Locked Frequency Divider Using Unbalanced Ring Oscillator Frequency Divider. IEEE Access 9: 124921-124930 (2021) - 2020
- [j6]Sheng-Lyang Jang, Ho-Chang Lee, Miin-Horng Juang:
2: 1 Injection-Locked Frequency Dividers Using Multi-Resonance Spiral-Inductor Resonator. IEEE Access 8: 202240-202248 (2020) - [c4]Wen-Cheng Lai, Sheng-Lyang Jang, Yu-Wen Huang, Miin-Horng Juang:
Divide-by-2 Injection-Locked Frequency Divider Using 3-path Transformer-Coupled Resonator. ICECS 2020: 1-4
2010 – 2019
- 2019
- [j5]Sheng-Lyang Jang, Yi-You Liu, Miin-Horng Juang:
A triple-band voltage-controlled oscillator with a triple-resonance resonator. Microelectron. J. 83: 1-5 (2019) - [c3]Wen-Cheng Lai, Sheng-Lyang Jang, Jyun-Jhih Wang, Miin-Horng Juang:
A Class-C 3-phase CMOS Capacitive-Coupled VCO. ICCE-TW 2019: 1-2 - 2018
- [j4]Sheng-Lyang Jang, Chih-Chiang Kang, Huan-Chun Wang, Miin-Horng Juang:
Dual-resonance concurrent oscillator. Microelectron. Reliab. 83: 208-215 (2018) - [c2]Sheng-Lyang Jang, Ke Jen Lin, Wen-Cheng Lai, Miin-Horng Juang:
A capacitive cross-coupled GaN HEMT injection-locked frequency divider. VLSI-DAT 2018: 1-3 - 2016
- [j3]Sheng-Lyang Jang, Yu-Tai Chang, Ching-Wen Hsue, Miin-Horng Juang:
Wide-locking range divide-by-4 injection-locked frequency divider using injection MOSFET DC-biased above threshold region. Int. J. Circuit Theory Appl. 44(5): 968-976 (2016) - [j2]Sheng-Lyang Jang, Yi-You Liu, Chih-Han Fang, Wen-Cheng Lai, Miin-Horng Juang:
Divide-by-2 LC injection-locked frequency divider with wide locking range at low and high injection powers. Int. J. Circuit Theory Appl. 44(12): 2174-2182 (2016) - 2013
- [c1]Sanjeev Jain, Sheng-Lyang Jang, Miin-Horng Juang:
A 4.0/7.5-GHz dual-band LC VCO in 0.18-μm SiGe BiCMOS technology. VLSI-DAT 2013: 1-4 - 2011
- [j1]Miin-Horng Juang, Jim Yu, C. C. Hwang, D. C. Shye, J. L. Wang:
Trench MOS barrier Schottky rectifier formed by counter-doping trench-bottom implantation. Microelectron. Reliab. 51(2): 365-369 (2011)
Coauthor Index
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