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Journal Articles
- 2008
[j4]Koji Nii, Makoto Yabuuchi, Yasumasa Tsukamoto, Shigeki Ohbayashi, Susumu Imaoka, Hiroshi Makino, Yoshinobu Yamagami, Satoshi Ishikura, Toshio Terano, Toshiyuki Oashi, Keiji Hashimoto, Akio Sebe, Gen Okazaki, Katsuji Satomi, Hironori Akamatsu, Hirofumi Shinohara:
A 45-nm Bulk CMOS Embedded SRAM With Improved Immunity Against Process and Temperature Variations. IEEE J. Solid State Circuits 43(1): 180-191 (2008)- [j3]Satoshi Ishikura, Marefusa Kurumada, Toshio Terano, Yoshinobu Yamagami, Naoki Kotani, Katsuji Satomi, Koji Nii, Makoto Yabuuchi, Yasumasa Tsukamoto, Shigeki Ohbayashi, Toshiyuki Oashi, Hiroshi Makino, Hirofumi Shinohara, Hironori Akamatsu:
A 45 nm 2-port 8T-SRAM Using Hierarchical Replica Bitline Technique With Immunity From Simultaneous R/W Access Issues. IEEE J. Solid State Circuits 43(4): 938-945 (2008) - 1997
- [j2]Ken'ichi Shimomura, Hiroki Shimano, Narumi Sakashita, Fumihiro Okuda, Toshiyuki Oashi, Yasuo Yamaguchi, Takahisa Eimori, Masahide Inuishi, Kazutami Arimoto, Shigeto Maegawa, Yasuo Inoue, Shinji Komori, Kazuo Kyuma:
A 1-V 46-ns 16-Mb SOI-DRAM with body control technique. IEEE J. Solid State Circuits 32(11): 1712-1720 (1997) - 1994
- [j1]Katsuhiro Suma, Takahiro Tsuruda, Hideto Hidaka, Takahisa Eimori, Toshiyuki Oashi, Yasuo Yamaguchi, Toshiaki Iwamatsu, Masakazu Hirose, Fukashi Morishita
, Kazutarni Arimoto, Kazuyasu Fujishima, Yasuo Inoue, Tadashi Nishimura, Tsutomu Yoshihara:
An SOI-DRAM with wide operating voltage range by CMOS/SIMOX technology. IEEE J. Solid State Circuits 29(11): 1323-1329 (1994)
Conference and Workshop Papers
- 2007
- [c1]Makoto Yabuuchi, Koji Nii, Yasumasa Tsukamoto, Shigeki Ohbayashi, Susumu Imaoka, Hiroshi Makino, Yoshinobu Yamagami, Satoshi Ishikura, Toshio Terano, Toshiyuki Oashi, Keiji Hashimoto, Akio Sebe, Gen Okazaki, Katsuji Satomi, Hironori Akamatsu, Hirofumi Shinohara:
A 45nm Low-Standby-Power Embedded SRAM with Improved Immunity Against Process and Temperature Variations. ISSCC 2007: 326-606
Coauthor Index
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