Koji Nii

Name: dblp XML data dump
Creator: Schloss Dagstuhl - Leibniz Center for Informatics
Published: 1993
License: https://creativecommons.org/publicdomain/zero/1.0/
Keywords: dblp, XML, computer science, scholarly publications, metadata

◀ ▶ joint publications with Noriaki Maeda

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Publications

2014
[c29]
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Mitsuhiko Igarashi, Toshifumi Uemura, Ryo Mori, Noriaki Maeda, Hiroshi Kishibe, Midori Nagayama, Masaaki Taniguchi, Kohei Wakahara, Toshiharu Saito, Masaki Fujigaya, Kazuki Fukuoka, Koji Nii, Takeshi Kataoka, Toshihiro Hattori:
10.2 A 28nm HPM heterogeneous multi-core mobile application processor with 2GHz cores and low-power 1GHz cores. ISSCC 2014: 178-179
2013
[j22]
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  - journals/jssc/MaedaKMTTNS13
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Noriaki Maeda, Shigenobu Komatsu, Masao Morimoto, Koji Tanaka, Yasumasa Tsukamoto, Koji Nii, Yasuhisa Shimazaki:
A 0.41 µA Standby Leakage 32 kb Embedded SRAM with Low-Voltage Resume-Standby Utilizing All Digital Current Comparator in 28 nm HKMG CMOS. IEEE J. Solid State Circuits 48(4): 917-923 (2013)
[j20]
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  - journals/micro/FukuokaMNFSKIWMHSFTKH13
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Kazuki Fukuoka, Noriaki Maeda, Koji Nii, Masaki Fujigaya, Noriaki Sakamoto, Takao Koike, Takahiro Irita, Kohei Wakahara, Tsugio Matsuyama, Keiji Hasegawa, Toshiharu Saito, Akira Fukuda, Kaname Teranishi, Takeshi Kataoka, Toshihiro Hattori:
Power-Management Features of R-Mobile U2, an Integrated Application Processor and Baseband Processor. IEEE Micro 33(6): 26-36 (2013)
[c21]
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  - conf/isscc/FujigayaSKIWMHSFTFMNKH13
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Masaki Fujigaya, Noriaki Sakamoto, Takao Koike, Takahiro Irita, Kohei Wakahara, Tsugio Matsuyama, Keiji Hasegawa, Toshiharu Saito, Akira Fukuda, Kaname Teranishi, Kazuki Fukuoka, Noriaki Maeda, Koji Nii, Takeshi Kataoka, Toshihiro Hattori:
A 28nm High-κ metal-gate single-chip communications processor with 1.5GHz dual-core application processor and LTE/HSPA+-capable baseband processor. ISSCC 2013: 156-157
2006
[j3]
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Masanao Yamaoka, Noriaki Maeda, Yoshihiro Shinozaki, Yasuhisa Shimazaki, Koji Nii, Shigeru Shimada, Kazumasa Yanagisawa, Takayuki Kawahara:
90-nm process-variation adaptive embedded SRAM modules with power-line-floating write technique. IEEE J. Solid State Circuits 41(3): 705-711 (2006)

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