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E. R. Heller

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Journal Articles

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2016
[j4]
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  - journals/mr/ArehartSVPHR16
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A. R. Arehart, A. Sasikumar, Glen David Via, B. S. Poling, E. R. Heller, S. A. Ringel:
Evidence for causality between GaN RF HEMT degradation and the E_C-0.57 eV trap in GaN. Microelectron. Reliab. 56: 45-48 (2016)
2015
[j3]
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B. S. Poling, J. L. Brown, E. R. Heller, B. Stumpff, J. A. Beckman, A. M. Hilton:
Performance of commercial foundry-level AlGaN/GaN HEMTs after hot electron stressing. Microelectron. Reliab. 55(8): 1187-1191 (2015)
[j2]
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A. Sasikumar, A. R. Arehart, Glen David Via, B. Winningham, B. S. Poling, E. R. Heller, S. A. Ringel:
Identification of an RF degradation mechanism in GaN based HEMTs triggered by midgap traps. Microelectron. Reliab. 55(11): 2258-2262 (2015)
2008
[j1]
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E. R. Heller, A. Crespo:
Electro-thermal modeling of multifinger AlGaN/GaN HEMT device operation including thermal substrate effects. Microelectron. Reliab. 48(1): 45-50 (2008)

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