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Publication search results
found 209 matches
- 2024
- Yahui Feng, Hongxia Guo, Wuying Ma, Jiawen Hu, Xiaoping Ouyang, Jinxin Zhang, Fengqi Zhang, Hong Zhang, Ruxue Bai, Xiaohua Ma, Yue Hao:
Effect of 60Coγ ray radiation on electrical properties of SiGe HBTs at low temperatures. Microelectron. J. 144: 106058 (2024) - 2023
- Francesco Centurelli, Pietro Monsurrò, Pasquale Tommasino, Alessandro Trifiletti:
A Novel Parallel Digitizer With a Pulseless Mixing-Filtering-Processing Architecture and Its Implementation in a SiGe HBT Technology at 40GS/s. IEEE Access 11: 75657-75670 (2023) - Ickhyun Song, Gyungtae Ryu, Seung Hwan Jung, John D. Cressler, Moon-Kyu Cho:
Wideband SiGe-HBT Low-Noise Amplifier with Resistive Feedback and Shunt Peaking. Sensors 23(15): 6745 (2023) - Lisheng Chen, Lang Chen, He Zhu, Roberto Gómez-García, Xi Zhu:
A Wideband Balanced Amplifier Using Edge-Coupled Quadrature Couplers in 0.13-μm SiGe HBT Technology. IEEE Trans. Circuits Syst. I Regul. Pap. 70(2): 631-641 (2023) - John D. Cressler:
The SiGe HBT at Cryogenic Temperatures: Invited Pager. BCICTS 2023: 274-279 - A. Gauthier, E. Brezza, A. Montagné, N. Guitard, J. Azevedo Goncalves, Michel Buczko, S. Jan, N. Derrier, Didier Céli, C. Deglise-Favre, J. Ma, H. Audouin, F. Deprat, I D. Ristoiu, L. Berthier, L. Clément, B. Grelaud, C. Rougier, Pascal Chevalier:
Low-Noise Si/SiGe HBT for LEO Satellite User Terminals in Ku-Ka Bands. BCICTS 2023: 187-190 - Dimitris P. Ioannou, Ephrem G. Gebreselasie, Vinh Pham, Uppili S. Raghunathan:
Electrostatic Discharge Stress Effects on the Performance and Reliability of High Performance NPN SiGe HBTs. BCICTS 2023: 245-248 - Harrison P. Lee, Nelson Sepúlveda-Ramos, Jeffrey W. Teng, Jackson P. Moody, Delgermaa Nergui, Brett L. Ringel, Zachary R. Brumbach, Alizeh Premani, Uppili S. Raghunathan, Vibhor Jain, John D. Cressler:
The Effects of Carbon Doping on the Performance and Electrical Reliability of SiGe HBTs. BCICTS 2023: 253-256 - Beng Woon Lim, Ajay Raman, Saurabh Sirohi:
Simulation of DC Safe Operating Area and RF Breakdown in SiGe PA HBT. BCICTS 2023: 50-53 - Jackson P. Moody, Jeffrey W. Teng, John D. Cressler:
The Impact of BEOL Stress on SiGe HBTs at Cryogenic Temperatures. BCICTS 2023: 270-273 - Prateek Kumar Sharma, Vaibhav Ruparelia, Saurabh Sirohi, Uppili S. Raghunathan, Venkat Vanukuru, Vibhor Jain:
Design Trade-offs between Series-Peaking Inductor and High $f_T$ SiGe HBTs in Transimpedance Amplifiers. BCICTS 2023: 167-170 - Christoph Weimer, Viktor Kazantsev, Markus Mäller, Michael Schröter:
Numerical Device Simulation Aided Study of RF-Stress-Caused Degradation in SiGe HBTs. BCICTS 2023: 249-252 - Thomas Zimmer, Sébastien Fregonese, Anjan Chakravorty:
Electro-Thermal Investigation of SiGe HBTs: A Review. BCICTS 2023: 44-49 - 2022
- Pournamy Sukumaran, Navin Kumar, Maran Ponnambalam:
A Linear High Frequency gm Boosting Wideband LNA in 130 nm SiGe HBT with Minimum NF of 4.3 dB for WiGig Application. J. Circuits Syst. Comput. 31(1): 2250001:1-2250001:26 (2022) - Francesco Centurelli, Pietro Monsurrò, Giuseppe Scotti, Pasquale Tommasino, Alessandro Trifiletti:
A SiGe HBT 6th-Order 10 GHz Inductor-Less Anti-Aliasing Low-Pass Filter for High-Speed ATI Digitizers. IEEE Trans. Circuits Syst. I Regul. Pap. 69(1): 100-113 (2022) - Chuanchuan Wan, Hao Zhang, Yuan Zhao, Ming Zeng, Jiayu Dong, Ling Li, Keping Wang:
A Broadband SiGe HBT Cascode Power Amplifier Achieving Watt-Level Peak Output Power With 38.6% PAE and 90.9% Large-Signal Fractional Bandwidth. IEEE Trans. Circuits Syst. II Express Briefs 69(12): 4734-4738 (2022) - Sandip Ghosh, Shon Yadav, Anjan Chakravorty:
Modeling Dynamic Lateral Current Crowding in SiGe HBTs. BCICTS 2022: 224-227 - Xiaodi Jin, Guangsheng Liang, Yves Zimmermann, Gerhard Fischer, Christoph Weimer, Mario Krattenmacher, Yaxin Zhang, Michael Schröter:
Thermal impedance of SiGe HBTs: Characterization and modeling. BCICTS 2022: 1-4 - Alvin J. Joseph, Vibhor Jain, John J. Pekarik, Ajay Raman, Shafi Syed, Liu Hang, Ned Cahoon, Randy Wolf, Venkat Vanukuru, Elan Veeramani, Beng Woon Lim, Uppili S. Raghunathan, Qizhi Liu, Yves Ngu:
SiGe HBTs for Power Amplifiers in Front-End of Radio Communication Systems. BCICTS 2022: 1-6 - Guofu Niu:
Physics, Characterization and Modeling of RF Linearity in SiGe HBT and FinFET Technologies. BCICTS 2022: 70-77 - Everett O'Malley, James F. Buckwalter:
A 1-W/mm2, 140-GHz SiGe HBT Power Amplifier using Optimized Embedding Techniques. BCICTS 2022: 53-56 - Uppili S. Raghunathan, Saurabh Sirohi, Vaibhav Ruparelia, Prateek Kumar Sharma, Dimitris P. Ioannou, Vibhor Jain, H. K. Kakara, S. Gedela, Venkat Vanukuru, P. Dongmo, C. Luce, R. Hazbun, R. Krishnasamy, J. Hwang, M. Levy, Kristin Welch, S. Liu, B. Cucci, S. Cole, J. Kantarovsky, A. Vallett, I. McCallum-Cook, M. Yu, R. Phelps, A. Divergilio, A. Sturm, M. Peters, S. Johnson, R. Rassel, M. Lagerquist, M. Kerbaugh, K. Newton, J. Pekarik, Q. Liu:
Performance Improvements of SiGe HBTs in 90nm BiCMOS Process with fT/fmax of 340/410 GHz. BCICTS 2022: 232-235 - Michael Schröter, Markus Müller, Mario Krattenmacher:
Device modeling tools and their application to SiGe HBT development. BCICTS 2022: 1-8 - Nelson Sepúlveda-Ramos, Jeffrey W. Teng, Harrison Lee, John D. Cressler:
Improved Electrical Reliability and Performance Enhancements in SiGe HBTs Using Dummy BEOL Metal Layers. BCICTS 2022: 62-65 - Saurabh Sirohi, Beng Woon Lim, Ajay Raman, Frederick A. Anderson:
Impact of Layout Parasitics and Thermal Coupling on PA performance and ruggedness in SiGe HBTs. BCICTS 2022: 82-85 - Christoph Weimer, Xiaodi Jin, Gerhard G. Fischer, Michael Schröter:
Characterization of Dynamic Large-Signal Operating Limits and Long-Term RF Reliability of SiGe HBTs. BCICTS 2022: 216-223 - Negar Shabanzadeh, Mostafa Jafari Nokandi, Kimmo Rasilainen, Jiangcheng Chen, Sumit Pratap Singh, Aarno Pärssinen, Timo Rahkonen:
A Study of the Effects Limiting the Responsivity of A Broadband THz Power Detector with On-chip Antenna in $0.13\mu \mathrm{m}$ SiGe HBT Technology. NorCAS 2022: 1-5 - Puneet Singh, Saroj Mondal, Krishnan S. Rengarajan:
Low Power, Wideband SiGe HBT LNA Covering 57-64 GHz Band. VDAT 2022: 161-171 - 2021
- Zhuoqi Li, Shuhuan Liu, Ci Song, Ning Han, Mathew Adefusika Adekoya:
Experimental Investigation of the Effects of Reactor Neutron-Gamma Pulse Irradiation on SiGe HBTs Under Different Bias Conditions. IEEE Access 9: 159105-159112 (2021) - Sébastien Fregonese, Chhandak Mukherjee, Holger Rücker, Pascal Chevalier, Gerhard Fischer, Didier Céli, Marina Deng, Marine Couret, François Marc, Cristell Maneux, Thomas Zimmer:
Electro-Thermal Limitations and Device Degradation of SiGe HBTs with Emphasis on Circuit Performance. BCICTS 2021: 1-7
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