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Publication search results
found 200 matches
- 2024
- Swapna Bharali, Bijit Choudhuri, Brinda Bhowmick:
Investigation of hetero gate oxide hetero stacked triple metal vertical tunnel FET with variable interface trap charges and temperature. Microelectron. J. 143: 106054 (2024) - 2023
- Sumedha Gupta, Neeta Pandey, R. S. Gupta:
Modeling of Dual- Metal Junctionless Accumulation-Mode cylindrical surrounding gate (DM-JAM-CSG) MOSFET for cryogenic temperature applications. Microelectron. J. 139: 105880 (2023) - Dibyendu Chowdhury, Bishnu Prasad De, Bhargav Appasani, Navaneet Kumar Singh, Rajib Kar, Durbadal Mandal, Nicu Bizon, Phatiphat Thounthong:
A Novel Dielectric Modulated Gate-Stack Double-Gate Metal-Oxide-Semiconductor Field-Effect Transistor-Based Sensor for Detecting Biomolecules. Sensors 23(6): 2953 (2023) - Jooyeon Jeong, Sehyeon Chung, Kyeongrok Jo, Taewhan Kim:
Synthesis and Utilization of Standard Cells Amenable to Gear Ratio of Gate-Metal Pitches for Improving Pin Accessibility. DATE 2023: 1-6 - Marc Jaikissoon, Jung-Soo Ko, Eric Pop, Krishna C. Saraswat:
Local Back-Gate Monolayer MoS2 Transistors with Channel Lengths Down to 50 nm and EOT ∼ 1 nm Showing Improved $I_{\text{on}}$ using Post-Metal Anneal. DRC 2023: 1-2 - Liang-Ying Su, Shih-Hsu Huang:
A Metal-Only ECO Algorithm for Improving Hardware Security with Gate Camouflaging. ICCE-Taiwan 2023: 301-302 - Mohammad Salim Wani, Hend I. Alkhammash, M. Shiblee, Sajad A. Loan:
Design and Simulation of Dual-Metal-Gate Tunnel Field Effect Transistor with Biomolecule Sensing Applications. ICM 2023: 137-140 - Tetsuo Narita, Daigo Kikuta, Kenji Ito, Tomoyuki Shoji, Tomohiko Mori, Satoshi Yamaguchi, Yasuji Kimoto, Kazuyoshi Tomita, Masakazu Kanechika, Takeshi Kondo, Tsutomu Uesugi, Jun Kojima, Jun Suda, Yoshitaka Nagasato, Satoshi Ikeda, Hiroki Watanabe, Masayoshi Kosaki, Tohru Oka:
Reliability issues of gate oxides and $p-n$ junctions for vertical GaN metal-oxide-semiconductor field-effect transistors (Invited). IRPS 2023: 1-10 - 2022
- Dong Fang, Guang Yang, Ming Qiao, Kui Xiao, Xiangyu Yang, Zheng Bian, Bo Zhang:
Split-gate trench metal-oxide-semiconductor field effect transistor with an inverted L-shaped source region. Microelectron. J. 130: 105616 (2022) - Guangyuan Jiang, Peng Cui, Guangyuan Zhang, Yuping Zeng, Guang Yang, Chen Fu, Zhaojun Lin, Mingyan Wang, Heng Zhou:
Influence of the ZrO2 gate dielectric layer on polarization coulomb field scattering in InAlN/GaN metal-insulator-semiconductor high-electron -mobility transistors. Microelectron. J. 129: 105602 (2022) - Khalil Tamersit, Hocine Bourouba, Abdellah Kouzou:
Improving the Current Ratio and Ambipolar Behavior of Junctionless CNTFETs Using Graded Metal Gate Work Function: A Quantum Simulation. SSD 2022: 1529-1533 - Han-Sol Ro, Sung Ho Kang, Sungyeop Jung:
The Effect of Gate Work Function on Wide Band-Gap Sn-doped α-Ga2O3 Metal-Semiconductor Field-Effect Transistors. ICEIC 2022: 1-3 - Bruna Cardoso Paz, Victor El-Homsy, David J. Niegemann, Bernhard Klemt, Emmanuel Chanrion, Vivien Thiney, Baptiste Jadot, Pierre-André Mortemousque, Benoit Bertrand, Thomas Bedecarrats, Heimanu Niebojewski, François Perruchot, Silvano De Franceschi, Maud Vinet, Matias Urdampilleta, Tristan Meunier:
Coupling control in the few-electron regime of quantum dot arrays using 2-metal gate levels in CMOS technology. ESSCIRC 2022: 45-48 - Sutanu Bera, Prabir Kumar Biswas:
Gated Convolutional Network for Metal Artifact Reduction in Computed Tomography Images. ICIP 2022: 4118-4122 - 2021
- Chandni Akbar, Yiming Li, Wen-Li Sung:
Deep Learning Algorithms for the Work Function Fluctuation of Random Nanosized Metal Grains on Gate-All-Around Silicon Nanowire MOSFETs. IEEE Access 9: 73467-73481 (2021) - Tulika Chawla, Mamta Khosla, Balwinder Raj:
Design and simulation of triple metal double-gate germanium on insulator vertical tunnel field effect transistor. Microelectron. J. 114: 105125 (2021) - Dennis Lin, Xiangyu Wu, Vivek Mootheri, Daire Cott, Benjamin Groven, Pierre Morin, Inge Asselberghs, Iuliana P. Radu:
On MX2-based metal-oxide-semiconductor device capacitance-voltage characteristics and dual-gate operation. DRC 2021: 1-2 - Anam Khan, Sajad A. Loan:
Double Gate TFET with Germanium Pocket and Metal drain using Dual Oxide. ICM 2021: 170-173 - Harshit Agrawal, Ari Hietanen, Simo Särkkä:
Metal Artifact Reduction In Cone-Beam Extremity Images Using Gated Convolutions. ISBI 2021: 1087-1090 - Marcel A. Kossel, Vishal Khatri, Matthias Braendli, Pier Andrea Francese, Thomas Morf, Serdar A. Yonar, Mridula Prathapan, Eric J. Lukes, Raymond A. Richetta, Carrie Cox:
An 8b DAC-Based SST TX Using Metal Gate Resistors with 1.4pJ/b Efficiency at 112Gb/s PAM-4 and 8-Tap FFE in 7iim CMOS. ISSCC 2021: 130-132 - Shaun Chou, Gu-Huan Li, Shawn Chen, Jun-Hao Chang, Wan-Hsueh Cheng, Shao-Ding Wu, Philex Fan, Chia-En Huang, Yu-Der Chih, Yih Wang, Jonathan Chang:
A 16Kb Antifuse One-Time-Programmable Memory in 5nm High-K Metal-Gate Fin-FET CMOS Featuring Bootstrap High Voltage Scheme, Read Endpoint Detection and Pseudo-Differential Sensing. VLSI Circuits 2021: 1-2 - 2020
- Xin Ju, Diing Shenp Ang:
Alteration of Gate-Oxide Trap Capture/Emission Time Constants by Channel Hot-Carrier Effect in the Metal-Oxide-Semiconductor Field-Effect Transistor. IEEE Access 8: 14048-14053 (2020) - Ria Bose, Jatindra Nath Roy:
Evanescent mode based compact modelling of a dual-metal double-gate tunnel field-effect transistor. IET Circuits Devices Syst. 14(7): 1032-1037 (2020) - Chun-Jung Wu, Katsunari Yoshioka, Tsutomu Matsumoto:
ThingGate: A Gateway for Managing Traffic of Bare-metal IoT Honeypot. J. Inf. Process. 28: 481-492 (2020) - Kyung Eun Park, Shun'ichiro Ohmi:
High-k LaBxNy gate insulator formed by the Ar/N2 plasma sputtering of N-doped LaB6 metal thin films and its application to floating-gate memory. DRC 2020: 1-2 - Jing-Chyi Liao, Paul Ko, M. H. Hsieh, Zheng Zeng:
Self-healing LDMOSFET for high-voltage application on high-k/metal gate CMOS process. IRPS 2020: 1-3 - Tianyu Yu, Liang Dai, Zhifeng Zhao, Weifeng Lyu, Mi Lin:
Study of Work-Function Variation on Performance of Dual-Metal Gate Fin Field-Effect Transistor. MLIS 2020: 392-399 - 2019
- Yonghan Kim, Min-Suk Kwon:
Solid-Electrolyte-Gated Graphene-Covered Metal-Insulator-Silicon-Insulator-Metal Waveguide With a Remarkably Large Modulation Depth. IEEE Access 7: 174312-174324 (2019) - Yu-Shyan Lin, Wei-Hou Goa:
High-temperature stability of improved AlGaN/AlN/GaN HEMT with pre-gate metal treatment. IEICE Electron. Express 16(5): 20181046 (2019) - Wei-feng Lü, Liang Dai:
Impact of work-function variation on analog figures-of-merits for high-k/metal-gate junctionless FinFET and gate-all-around nanowire MOSFET. Microelectron. J. 84: 54-58 (2019)
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