Ronald D. Schrimpf (Selection)

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10 R. Arinero, En-xia Zhang, Nadia Rezzak, Ronald D. Schrimpf, Daniel M. Fleetwood, B. K. Choï, A. B. Hmelo, J. Mekki, André Touboul, Frédéric Saigné: High fluence 1.8 MeV proton irradiation effects on n-type MOS capacitors. Microelectronics Reliability 51(12): 2093-2096 (2011)

Selection of 1 from 10 records - Ronald D. Schrimpf has 43 coauthors

Last update 2012-09-10 CET by the DBLP Team —

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