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K. Mourgues (Selection)

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8Electronic Edition pubzone.org CiteSeerX Google scholar BibTeX bibliographical record in XMLM. A. Belaïd, K. Ketata, K. Mourgues, M. Gares, M. Masmoudi, J. Marcon: Reliability study of power RF LDMOS device under thermal stress. Microelectronics Journal 38(2): 164-170 (2007)
7Electronic Edition pubzone.org CiteSeerX Google scholar BibTeX bibliographical record in XMLM. A. Belaïd, K. Ketata, M. Gares, K. Mourgues, M. Masmoudi, J. Marcon: Comparative analysis of RF LDMOS capacitance reliability under accelerated ageing tests. Microelectronics Reliability 47(1): 59-64 (2007)
6Electronic Edition pubzone.org CiteSeerX Google scholar BibTeX bibliographical record in XMLM. Gares, M. A. Belaïd, H. Maanane, M. Masmoudi, J. Marcon, K. Mourgues, Ph. Eudeline: Study of hot-carrier effects on power RF LDMOS device reliability. Microelectronics Reliability 47(9-11): 1394-1399 (2007)
5Electronic Edition pubzone.org CiteSeerX Google scholar BibTeX bibliographical record in XMLM. Gares, H. Maanane, M. A. Belaïd, M. Masmoudi, J. Marcon, K. Mourgues, P. Bertram, Ph. Eudeline: Impact de la Temperature sur la Fiabilite des Composants rf Ldmos de Puissance. CCECE 2006: 382-385
4Electronic Edition pubzone.org CiteSeerX Google scholar BibTeX bibliographical record in XMLH. Maanane, M. Masmoudi, J. Marcon, M. A. Belaïd, K. Mourgues, C. Tolant, K. Ketata, Ph. Eudeline: Study of RF N- LDMOS critical electrical parameter drifts after a thermal and electrical ageing in pulsed RF. Microelectronics Reliability 46(5-6): 994-1000 (2006)
3Electronic Edition pubzone.org CiteSeerX Google scholar BibTeX bibliographical record in XMLM. Gares, H. Maanane, M. Masmoudi, P. Bertram, J. Marcon, M. A. Belaïd, K. Mourgues, C. Tolant, Ph. Eudeline: Hot carrier reliability of RF N- LDMOS for S Band radar application. Microelectronics Reliability 46(9-11): 1806-1811 (2006)
2Electronic Edition pubzone.org CiteSeerX Google scholar BibTeX bibliographical record in XMLM. A. Belaïd, K. Ketata, K. Mourgues, H. Maanane, M. Masmoudi, J. Marcon: Comparative analysis of accelerated ageing effects on power RF LDMOS reliability. Microelectronics Reliability 45(9-11): 1732-1737 (2005)

Selection of 7 from 10 records - K. Mourgues has 19 coauthors

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