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| 2 | Yongseok Ahn, Sanghyun Lee, Gwanhyeob Koh, Taeyoung Chung, Kinam Kim: The abnormality in gate oxide failure induced by stress-enhanced diffusion of polycrystalline silicon. Microelectronics Reliability 42(3): 349-354 (2002) |
Selection of 1 from 2 records - Sanghyun Lee has 4 coauthors
Copyright © 2009-12-27 by Michael Ley (ley@uni-trier.de)