| 4 |  | Noboru Shibata,
Kazushige Kanda,
T. Hisada,
Katsuaki Isobe,
M. Sato,
Y. Shimizu,
Takahiro Shimizu,
T. Sugimoto,
T. Kobayashi,
K. Inuzuka,
Naoaki Kanagawa,
Yasuyuki Kajitani,
Takeshi Ogawa,
J. Nakai,
Kiyoaki Iwasa,
M. Kojima,
Toshihiro Suzuki,
Y. Suzuki,
S. Sakai,
Tomofumi Fujimura,
Y. Utsunomiya,
Toshifumi Hashimoto,
M. Miakashi,
N. Kobayashi,
M. Inagaki,
Y. Matsumoto,
S. Inoue,
Y. Suzuki,
D. He,
Y. Honda,
Junji Musha,
M. Nakagawa,
Mitsuaki Honma,
Naofumi Abiko,
Mitsumasa Koyanagi,
M. Yoshihara,
Kazumi Ino,
Mitsuhiro Noguchi,
Teruhiko Kamei,
Yosuke Kato,
S. Zaitsu,
Hiroaki Nasu,
T. Ariki,
Hardwell Chibvongodze,
Mitsuyuki Watanabe,
H. Ding,
N. Ookuma,
R. Yamashita,
G. Liang,
Gertjan Hemink,
Farookh Moogat,
Cuong Trinh,
Masaaki Higashitani,
Tuan Pham,
K. Kanazawa:
A 19nm 112.8mm2 64Gb multi-level flash memory with 400Mb/s/pin 1.8V Toggle Mode interface.
ISSCC 2012: 422-424 |
| 1 |  | Cuong Trinh,
Noboru Shibata,
Takeshi Nakano,
Mikio Ogawa,
Jumpei Sato,
Yoshikazu Takeyama,
Katsuaki Isobe,
Binh Le,
Farookh Moogat,
Nima Mokhlesi,
Kenji Kozakai,
Patrick Hong,
Teruhiko Kamei,
Kiyoaki Iwasa,
J. Nakai,
Takahiro Shimizu,
Mitsuaki Honma,
S. Sakai,
Toshimasa Kawaai,
Satoru Hoshi,
Jonghak Yuh,
Cynthia Hsu,
Taiyuan Tseng,
Jason Li,
Jayson Hu,
M. Liu,
Shahzad Khalid,
J. Chen,
Mitsuyuki Watanabe,
H. Lin,
J. Yang,
K. McKay,
K. Nguyen,
Tuan Pham,
Y. Matsuda,
K. Nakamura,
K. Kanebako,
S. Yoshikawa,
W. Igarashi,
A. Inoue,
T. Takahashi,
Y. Komatsu,
C. Suzuki,
K. Kanazawa,
Masaaki Higashitani,
Seungpil Lee,
T. Murai,
K. Nguyen,
James Lan,
Sharon Huynh,
M. Murin,
M. Shlick,
M. Lasser,
Raul Cernea,
Mehrdad Mofidi,
K. Schuegraf,
Khandker Quader:
A 5.6MB/s 64Gb 4b/Cell NAND Flash memory in 43nm CMOS.
ISSCC 2009: 246-247 |