| 3 |       | Yan Li,
Seungpil Lee,
Ken Oowada,
Hao Nguyen,
Qui Nguyen,
Nima Mokhlesi,
Cynthia Hsu,
Jason Li,
Venky Ramachandra,
Teruhiko Kamei,
Masaaki Higashitani,
Tuan Pham,
Mitsuaki Honma,
Yoshihisa Watanabe,
Kazumi Ino,
Binh Le,
Byungki Woo,
Khin Htoo,
Taiyuan Tseng,
Long Pham,
Frank Tsai,
Kwang-ho Kim,
Yi-Chieh Chen,
Min She,
Jonghak Yuh,
Alex Chu,
Chen Chen,
Ruchi Puri,
Hung-Szu Lin,
Yi-Fang Chen,
William Mak,
Jonathan Huynh,
Jim Chan,
Mitsuyuki Watanabe,
Daniel Yang,
Grishma Shah,
Pavithra Souriraj,
Dinesh Tadepalli,
Tenugu Suman,
Ray Gao,
Viski Popuri,
Behdad Azarbayjani,
Ravindra Madpur,
James Lan,
Emilio Yero,
Feng Pan,
Patrick Hong,
Jang Yong Kang,
Farookh Moogat,
Yupin Fong,
Raul Cernea,
Sharon Huynh,
Cuong Trinh,
Mehrdad Mofidi,
Ritu Shrivastava,
Khandker Quader:
128Gb 3b/cell NAND flash memory in 19nm technology with 18MB/s write rate and 400Mb/s toggle mode.
ISSCC 2012: 436-437 |
| 2 | | Takuya Futatsuyama,
Norihiro Fujita,
Naoya Tokiwa,
Yoshihiko Shindo,
Toshiaki Edahiro,
Teruhiko Kamei,
Hiroaki Nasu,
Makoto Iwai,
Koji Kato,
Yasuyuki Fukuda,
Naoaki Kanagawa,
Naofumi Abiko,
Masahide Matsumoto,
Toshihiko Himeno,
Toshifumi Hashimoto,
Yi-Ching Liu,
Hardwell Chibvongodze,
Takamitsu Hori,
Manabu Sakai,
Hong Ding,
Yoshiharu Takeuchi,
Hitoshi Shiga,
Norifumi Kajimura,
Yasuyuki Kajitani,
Kiyofumi Sakurai,
Kosuke Yanagidaira,
Toshihiro Suzuki,
Yuko Namiki,
Tomofumi Fujimura,
Man Mui,
Hao Nguyen,
Seungpil Lee,
Alex Mak,
Jeffery Lutze,
Tooru Maruyama,
Toshiharu Watanabe,
Takahiko Hara,
Shigeo Ohshima:
A 113mm2 32Gb 3b/cell NAND flash memory.
ISSCC 2009: 242-243 |
| 1 | | Cuong Trinh,
Noboru Shibata,
Takeshi Nakano,
Mikio Ogawa,
Jumpei Sato,
Yoshikazu Takeyama,
Katsuaki Isobe,
Binh Le,
Farookh Moogat,
Nima Mokhlesi,
Kenji Kozakai,
Patrick Hong,
Teruhiko Kamei,
Kiyoaki Iwasa,
J. Nakai,
Takahiro Shimizu,
Mitsuaki Honma,
S. Sakai,
Toshimasa Kawaai,
Satoru Hoshi,
Jonghak Yuh,
Cynthia Hsu,
Taiyuan Tseng,
Jason Li,
Jayson Hu,
M. Liu,
Shahzad Khalid,
J. Chen,
Mitsuyuki Watanabe,
H. Lin,
J. Yang,
K. McKay,
K. Nguyen,
Tuan Pham,
Y. Matsuda,
K. Nakamura,
K. Kanebako,
S. Yoshikawa,
W. Igarashi,
A. Inoue,
T. Takahashi,
Y. Komatsu,
C. Suzuki,
K. Kanazawa,
Masaaki Higashitani,
Seungpil Lee,
T. Murai,
K. Nguyen,
James Lan,
Sharon Huynh,
M. Murin,
M. Shlick,
M. Lasser,
Raul Cernea,
Mehrdad Mofidi,
K. Schuegraf,
Khandker Quader:
A 5.6MB/s 64Gb 4b/Cell NAND Flash memory in 43nm CMOS.
ISSCC 2009: 246-247 |
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