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| 18 |       | Neha Verma, Jyotika Jogi, Mridula Gupta, R. S. Gupta: Simulation of Enhanced Gate Control in a Double Gate Quantum Domain InAlAs/InGaAs/InP HEMT. UKSim 2012: 660-664 |
| 17 | | Pujarini Ghosh, Subhasis Haldar, R. S. Gupta, Mridula Gupta: An analytical drain current model for dual material engineered cylindrical/surrounded gate MOSFET. Microelectronics Journal 43(1): 17-24 (2012) |
| 16 | | Priyanka Malik, R. S. Gupta, Rishu Chaujar, Mridula Gupta: AC analysis of nanoscale GME-TRC MOSFET for microwave and RF applications. Microelectronics Reliability 52(1): 151-158 (2012) |
| 15 | | Vandana Kumari, Manoj Saxena, R. S. Gupta, Mridula Gupta: Temperature dependent drain current model for Gate Stack Insulated Shallow Extension Silicon On Nothing (ISESON) MOSFET for wide operating temperature range. Microelectronics Reliability 52(6): 974-983 (2012) |
| 14 | | Rajni Gautam, Manoj Saxena, R. S. Gupta, Mridula Gupta: Effect of localised charges on nanoscale cylindrical surrounding gate MOSFET: Analog performance and linearity analysis. Microelectronics Reliability 52(6): 989-994 (2012) |
| 13 | | Vandana Kumari, Manoj Saxena, R. S. Gupta, Mridula Gupta: Simulation study of Insulated Shallow Extension Silicon On Nothing (ISESON) MOSFET for high temperature applications. Microelectronics Reliability 52(8): 1610-1612 (2012) |
| 12 | | Rakhi Narang, Manoj Saxena, R. S. Gupta, Mridula Gupta: Immunity against temperature variability and bias point invariability in double gate tunnel field effect transistor. Microelectronics Reliability 52(8): 1617-1620 (2012) |
| 11 | | Sona P. Kumar, Anju Agrawal, Rishu Chaujar, R. S. Gupta, Mridula Gupta: Device linearity and intermodulation distortion comparison of dual material gate and conventional AlGaN/GaN high electron mobility transistor. Microelectronics Reliability 51(3): 587-596 (2011) |
| 10 | | Servin Rathi, Jyotika Jogi, Mridula Gupta, R. S. Gupta: Modeling of hetero-interface potential and threshold voltage for tied and separate nanoscale InAlAs-InGaAs symmetric double-gate HEMT. Microelectronics Reliability 49(12): 1508-1514 (2009) |
| 9 | | Rupendra Kumar Sharma, Ritesh Gupta, Mridula Gupta, R. S. Gupta: Dynamic performance of graded channel DG FD SOI n-MOSFETs for minimizing the gate misalignment effect. Microelectronics Reliability 49(7): 699-706 (2009) |
| 8 | | Sona P. Kumar, Anju Agrawal, Rishu Chaujar, Mridula Gupta, R. S. Gupta: Performance assessment and sub-threshold analysis of gate material engineered AlGaN/GaN HEMT for enhanced carrier transport efficiency. Microelectronics Journal 39(12): 1416-1424 (2008) |
| 7 | | Sona P. Kumar, Anju Agrawal, Rishu Chaujar, Sneha Kabra, Mridula Gupta, R. S. Gupta: Threshold voltage model for small geometry AlGaN/GaN HEMTs based on analytical solution of 3-D Poisson's equation. Microelectronics Journal 38(10-11): 1013-1020 (2007) |
| 6 | | Sneha Kabra, Harsupreet Kaur, Subhasis Haldar, Mridula Gupta, R. S. Gupta: Two-dimensional subthreshold analysis of sub-micron GaN MESFET. Microelectronics Journal 38(4-5): 547-555 (2007) |
| 5 | | Parvesh Gangwani, Sujata Pandey, Subhasis Haldar, Mridula Gupta, R. S. Gupta: A compact C-V model for 120nm AlGaN/GaN HEMT with modified field dependent mobility for high frequency applications. Microelectronics Journal 38(8-9): 848-854 (2007) |
| 4 | | Sona P. Kumar, Anju Agrawal, Sneha Kabra, Mridula Gupta, R. S. Gupta: An analysis for AlGaN/GaN modulation doped field effect transistor using accurate velocity-field dependence for high power microwave frequency applications. Microelectronics Journal 37(11): 1339-1346 (2006) |
| 3 | | Sneha Kabra, Harsupreet Kaur, Ritesh Gupta, Subhasis Haldar, Mridula Gupta, R. S. Gupta: A semi empirical approach for submicron GaN MESFET using an accurate velocity field relationship for high power applications. Microelectronics Journal 37(7): 620-626 (2006) |
| 2 | | Ritesh Gupta, Sandeep k. Aggarwal, Mridula Gupta, R. S. Gupta: An analytical model for discretized doped InAlAs/InGaAs heterojunction HEMT for higher cut-off frequency and reliability. Microelectronics Journal 37(9): 919-929 (2006) |
| 1 | | N. Kaushik, A. Kranti, Mridula Gupta, R. S. Gupta: Extraction technique for characterization of electric field distribution and drain current in VDMOS power transistor. Microelectronics Journal 34(1): 77-83 (2003) |
Selection of 18 from 18 records - Mridula Gupta has 23 coauthors
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