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G. Bersuker (Selection)

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2Electronic Edition pubzone.org CiteSeerX Google scholar BibTeX bibliographical record in XMLN. A. Chowdhury, X. Wang, G. Bersuker, C. Young, N. Rahim, D. Misra: Temperature dependent time-to-breakdown (TBD) of TiN/HfO2 n-channel MOS devices in inversion. Microelectronics Reliability 49(5): 495-498 (2009)
1Electronic Edition pubzone.org CiteSeerX Google scholar BibTeX bibliographical record in XMLR. Pagano, Salvatore Lombardo, F. Palumbo, P. Kirsch, S. A. Krishnan, C. Young, R. Choi, G. Bersuker, James H. Stathis: A novel approach to characterization of progressive breakdown in high-k/metal gate stacks. Microelectronics Reliability 48(11-12): 1759-1764 (2008)

Selection of 2 from 2 records - G. Bersuker has 12 coauthors

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