<?xml version="1.0"?>
<dblp>
<article key="journals/tcas/KuangSGWFSNN11" mdate="2011-10-20">
<author>Jente B. Kuang</author>
<author>Jeremy D. Schaub</author>
<author>Fadi H. Gebara</author>
<author>Dieter F. Wendel</author>
<author>Thomas Fr&#246;hnel</author>
<author>Sudesh Saroop</author>
<author>Sani R. Nassif</author>
<author>Kevin J. Nowka</author>
<title>The Design and Characterization of a Half-Volt 32 nm Dual-Read 6T SRAM.</title>
<pages>2010-2016</pages>
<year>2011</year>
<volume>58-I</volume>
<journal>IEEE Trans. on Circuits and Systems</journal>
<number>9</number>
<ee>http://dx.doi.org/10.1109/TCSI.2011.2162459</ee>
<url>db/journals/tcas/tcasI58.html#KuangSGWFSNN11</url>
</article>
</dblp>
