The influence of ferroelectric-electrode interface layer on the electrical characteristics of negative-capacitance ferroelectric double-gate field-effect transistors.

Yongguang Xiao Minghua Tang Jiancheng Li Bo Jiang John He The influence of ferroelectric-electrode interface layer on the electrical characteristics of negative-capacitance ferroelectric double-gate field-effect transistors. 757-760 2012 52 Microelectronics Reliability 4 http://dx.doi.org/10.1016/j.microrel.2011.11.006 db/journals/mr/mr52.html#XiaoTLJH12