Applying the fWLR concept to Stress induced leakage current in non-volatile memory processes.

Guoqiao Tao Andrea Scarpa Leo van Marwijk Kitty van Dijk Fred G. Kuper Applying the fWLR concept to Stress induced leakage current in non-volatile memory processes. 1269-1273 2004 44 Microelectronics Reliability 8 http://dx.doi.org/10.1016/j.microrel.2004.04.012 db/journals/mr/mr44.html#TaoSMDK04